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Evidence of a pressure-induced metallization process in monoclinic VO2

Academic Article
Publication Date:
2007
abstract:
Raman and combined infrared transmission and reflectivity measurements were carried out at room temperature (RT) on monoclinic VO2 over the 0-19 GPa and 0-14 GPa pressure ranges. Both lattice dynamics and optical gap show a remarkable stability up to P-*similar to 10 GPa whereas subtle modifications of V ion arrangements within the monoclinic lattice, together with the onset of a metallization process via band gap filling, are observed for P > P-*. Differently from P=0, where the VO2 metallic phase is found only in conjunction with the rutile structure above 340 K, a new RT metallic phase within a monoclinic structure appears accessible in the high pressure regime.
Iris type:
01.01 Articolo in rivista
Keywords:
METAL-INSULATOR TRANSITIONS; MOTT-HUBBARD; BAND THEORY; TEMPERATURE; DEPENDENCE; VO2; Pressure-Induced; Metallization
List of contributors:
Lupi, Stefano; Postorino, Paolo; Malavasi, Lorenzo; DI CASTRO, Daniele; Marini, Carlo
Handle:
https://iris.cnr.it/handle/20.500.14243/144044
Published in:
PHYSICAL REVIEW LETTERS (PRINT)
Journal
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