In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors

The electronic properties in the growth plane of a semiconductor was achieved by in-plane engineering of the effects of hydrogen on dilute nitrides of Galium hetrostructure. The replacement of Arsenic atoms by Nitrogen atoms led to nonlinear effects in the electronic properties of host lattice. Focussing energetic electron beams on the surface of hydrogenated semiconducting Ga hetrostructure displaced Hydrogen atoms from their Nitrogen passivation sites leading to decrease of crystal bandgap in the spatial region. The silver wire that was deposited by standard optical lithography on semiconducting Ga hetrostructure and no light emission was detected at the energy gap of untreated sample outside the wire. A two-dimensional image of wire obtained by cathodoluminescence (CL) spectroscopy was recorded at 5K temperature. The CL intensity corresponding to photons emitted from the well region after impingement of the electron beams was given by an integral equation.