New electronic surface states on In-terminated InAs(001)4x2-c(8x2) clean surface

We report the studies of electronic structure of the InAs(001)4x2-c(8x2) surface by performing angle-resolved photoemission spectroscopy, LEED and STM measurements. The reconstruction of the clean surface was obtained by ion bombardment and annealing procedure. STM pictures show an ordered array of In-chains, and the photoemission experiments reveal new electronic surface structures. The intensity of these structures, which are located at binding energy of -2.94 and -1.05 eV, strongly depend on the surface preparation, and on the light polarization. They are non-dispersive with the photon energy.