Effects of the oxygen precursor on the interface between (100) Si and HfO2 films grown by atomic layer deposition

The interface between (100) Si and HfO2 grown by atomic layer deposition is strongly influenced by the choice of the oxygen precursor. In particular, the use of oxidants with different oxidizing power such as H2O and O-3 produces interfaces differing both in terms of density of electronic traps and defect microstructure. While H2O produces a Si/SiO2-like interface, characterized by the presence of the P-b0 center, the high reactivity of O-3 induces a modification in the defect wavefunction, as revealed by electrically detected magnetic resonance. Post growth annealing in N-2 at T >= 600 degrees C allows the recovery of a Si/SiO2-like interface. (C) 2007 American Institute of Physics.