Design of competitive light-weight composite materials: SiC/TiSi2

Combined theoretical-experimental approach has been applied to fully investigate the interfacial phenomena occurring at Si-Ti/C-based interfaces. All the interaction phenomena are strongly dependent on the temperature, as expected. In addition, competitive phenomena, i.e. evaporation/condensation of Si at the triple line, combined with the epitaxial growth/packaging of SiC crystals at Si-Ti/C interfaces, strongly affect the spreading kinetics. Moreover, the advancing contact angle is also influenced by the procedure applied: the presence SiO2-primary oxide at the alloy surface processed by contact heating sessile drop method, inhibits or delays the first appearance of Si-Ti/C interface. On the contrary, the presence of this oxide skin, mitigates the Si-evaporation, at least at T?Tm. In view to relate these evidences with reactive infiltration processes, such knowledge may be helpful to select the optimal operating parameters to obtain tailored SiC-TiSi2 composites.