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SEMICONDUCTOR SCIENCE AND TECHNOLOGY (PRINT)

Rivista

Codice:

E153214

ISSN:

0268-1242

Dati Generali

Dati Generali

Pubblicazioni (79)

Ordina Pubblicazioni:

ascendente
decrescente

3D simulation of quantum-wire confining potential for a GaAs/AlGaAs 2DEG heterostructure

Articolo

A silicon compatible resonant cavity enhanced photodetector working at 1.55 mu m

Articolo

ARSENIC REDISTRIBUTION AND OUT-DIFFUSION IN TISI2-SI BILAYERED STRUCTURES

Articolo

Advanced methods for the analysis of x-ray absorption spectroscopy data applied to semiconductors

Articolo

Advanced methods for the analysis of x-ray absorption spectroscopy data applied to semiconductors

Capitolo di libro

An affordable method to produce CuInS2 'mechano-targets' for film deposition

Articolo

Arsenic and boron diffusion in silicon from implanted cobalt silicide layers

Articolo

Assessing the thermoelectric properties of single InSb nanowires: The role of thermal contact resistance

Articolo

Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications

Articolo

Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene

Articolo

Carrier masses and band-gap temperature sensitivity in Ga(AsBi) alloys

Articolo

Charge pumping in InAs nanowires by surface acoustic waves

Articolo

Charge pumping in InAs nanowires by surface acoustic waves

Articolo

Charge transport in pentacene and porphyrin-based organic thin film

Articolo

Coherent transport in coupled quantum wires assisted by surface acoustic waves

Articolo

Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy

Articolo

Controlling the diameter distribution and density of InAs nanowires grown by Au-assisted methods

Articolo

Crossbar architecture for tera scale integration

Articolo

DEUTERIUM IN INGAAS/GAAS STRAINED QUANTUM-WELLS - AN OPTICALLY-ACTIVE IMPURITY

Articolo

Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

Articolo

Diffusion and outdiffusion of aluminium implanted into silicon

Articolo

ELECTRICAL CHARACTERIZATION OF POLYCRYSTALLINE SILICON FILMS ON SI SUBSTRATES PROCESSED BY RAPID THERMAL ANNEALING

Articolo

Effects of extreme dc-ageing and electron-beam irradiation in InGaN/AlGaN/GaN light-emitting diodes

Articolo

Effects of thermal annealing on the optical properties of inganas/gaas multiple quantum wells

Articolo

Electrical transport and depletion region in dry-etched Si-based nanostructures

Articolo

Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots

Articolo

Electronic properties of quantum dot systems realized in semiconductor nanowires

Articolo

Electronic transport in molecular devices: the role of coherent and incoherent electron-phonon scattering

Contributo in Atti di convegno

Entanglement and quantum computing with ballistic electrons

Articolo

Erbium-oxygen interactions in crystalline silicon

Articolo

Experimental analysis of a BMFET light intensity modulator: from static distributions to the carrier plasma dynamic and electro-optical device performance

Articolo

Fabrication and characterization of nanometer-sized gaps in suspended few-layer graphene devices

Articolo

Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing

Articolo

Fully implanted vertical p-i-n diodes using high-purity semi-insulating 4H-SiC wafers

Articolo

High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm

Articolo

Hole mobility in aluminium implanted silicon

Articolo

Improved electrical characterization of Al-Ti ohmic contacts on p-type ion implanted 6H-SiC

Articolo

Incorporation and electrical activity of Fe in LEC InP

Articolo

Influence of contacts on the electron transport dynamics inside a mesoscopic system

Articolo

Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition

Articolo

Kinetics peculiarities of photovoltage in vertical metamorphic InAs/InGaAs quantum dot structures

Articolo

Lattice strain induced by boron clusters in crystalline silicon

Articolo

Lattice strain induced by boron clusters in crystalline silicon

Articolo

Light-emitting silicon nanowires obtained by metal-assisted chemical etching

Articolo

Luminescence study of the disorder in polycrystalline InP thin films

Articolo

Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 mu m

Articolo

Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3?m

Articolo

Modelling of metamorphic quantum dots for single photon generation at long wavelength

Articolo

Near-infrared lateral photoresponse in InGaAs/GaAs quantum dots

Articolo

Noise thermometry applied to thermoelectric measurements in InAs nanowires

Articolo

On the relation between deep level compensation, resistivity and electric field in semi-insulating CdTe: Cl radiation detectors

Articolo

Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors

Articolo

Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data.

Articolo

Peculiarities of the hydrogenated In(AsN) alloy

Articolo

Photoelectric and deep level study of metamorphic InAs/InGaAs quantum dots with GaAs confining barriers for photoluminescence enhancement

Articolo

Photoluminescence of GaAs nanowires at an energy larger than the zincblende band-gap: dependence on growth parameters

Articolo

Photoluminescence properties of homoepitaxial InP films grown by remote plasma MOCVD technique

Articolo

Quantum computing with quantum-Hall edge state interferometry

Articolo

REALIGNMENT OF AS DOPED SILICON FILMS DEPOSITED ON (100) SILICON SUBSTRATES

Articolo

Relationship between structural and optoelectronic properties in semiconducting polymers

Articolo

Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs

Articolo

STRESS-INDUCED PRECIPITATION OF DOPANTS DIFFUSED INTO SI FROM TISI2 AND COSI2 IMPLANTED LAYERS

Articolo

Scanning transmission electron microscopy determination of critical InAs QD parameters from high-quality focused ion beam lamellas

Articolo

Smart integration of silicon nanowire arrays in all-silicon thermoelectric micro-nanogenerators

Articolo

Spatially selective hydrogen irradiation of dilute nitride semiconductors: A brief review

Articolo

Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis

Articolo

Structural and optical parameters of ZnSxSe1-x films deposited on quartz substrates by laser ablation

Articolo

Studies of nanoindentation and residual stress analysis of Ge/GaAs epilayers

Articolo

Temperature and current dependence of the optical intensity and energy shift in blue InGaN based LEDs: comparison between electroluminescence and cathodoluninescence

Articolo

Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires

Articolo

Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires

Articolo

The Mn site in Mn-doped GaAs nanowires: an EXAFS study

Articolo

The challenge of high-performance selective emitters for thermophotovoltaic applications

Articolo

The influence of the DX centre C-V and I-V characteristics of Schottky barriers in n-type AlGaAs

Articolo

Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits

Articolo

Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures

Articolo

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC

Articolo

Vacancy engineering by He induced nanovoids in crystalline Si

Articolo

X-ray absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition

Articolo

No Results Found

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