Boron ripening during solid-phase epitaxy of amorphous silicon

By means of large-scale molecular dynamics simulations we provide a
thorough atomic-scale picture of boron incorporation in crystalline
silicon upon solid-phase epitaxy. The present results show that boron
can either be incorporated as a substitutional dopant or form clusters
with a low content of silicon self-interstitials. A full
characterization of the formation process of boron-interstitial clusters
and their stoichiometry is presented. The present results are consistent
with available experimental information and also provide a deep physical
insight into B-doped silicon solid-phase epitaxy.