Publication Date:
2011
abstract:
This paper reports on the electrical characteristics of
silicon photomultipliers (SiPM) with optimized optical trench
technology. The SiPM arrays were characterized from single
pixels up to the full 64×64 pixel device. The data clearly show a
perfect scaling of the dark current with the pixel number, thus
indicating an almost ideal insulation among the pixels in the
whole voltage operating range.
silicon photomultipliers (SiPM) with optimized optical trench
technology. The SiPM arrays were characterized from single
pixels up to the full 64×64 pixel device. The data clearly show a
perfect scaling of the dark current with the pixel number, thus
indicating an almost ideal insulation among the pixels in the
whole voltage operating range.
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Pagano, Roberto; Lombardo, SALVATORE ANTONINO; Libertino, Sebania; Corso, Domenico
Book title:
Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2011
Published in: