Statistical Analysis of Dark Current in Silicon Photomultipliers

The aim of this paper is to investigate on a statistical
basis at the wafer level the relationship existing among the
dark currents of the single pixel compared to the whole Silicon
Photomultiplier array. This is the first time to our knowledge
that such a comparison is made, crucial to pass this new
technology to the semiconductor manufacturing standards. In
particular, emission microscopy measurements and current
measurements allowed us to conclude that optical trenches
strongly improve the device performances.