Hot carrier effects in n-MOSFETs with SiO2/HfO2/HfSiO gate stack and TaN metal gat

Charge trapping and trap generation in field-effect transistors with SiO2/HfO2/HfSiO gate stack and TaN
metal gate electrode are investigated under uniform and non-uniform charge injection along the channel.
Compared to constant voltage stress (CVS), hot carrier stress (HCS) exhibits more severe degradation in
transconductance and subthreshold swing. By applying a detrapping bias, it is demonstrated that charge
trapping induced degradation is reversible during CVS, while the damage is permanent for hot carrier
injection case.