Recent advances on dielectrics technology for SiC and GaN power devices

Silicon carbide (SiC) and gallium nitride (GaN) devices are considered as optimal solutions to meetthe requirements of the modern power electronics. In fact, they can allow an improved efficiency inenergy conversion at high power, as required today in several strategic application fields (like consumerelectronics, renewable energies technology, transportation, electric power distribution, etc.).However, while in the last decades impressive progresses have been recorded both in SiC and GaNdevices, the full exploitation of these materials has not been reached yet, due to some open technologicalkey issues.This paper reviews some recent advances in dielectrics technology currently adopted to optimize theperformances of SiC and GaN transistors. In particular, in the case of SiC the discussion is focused on theoptimization of SiO2/SiC interfaces in 4H-SiC MOSFETs technology by passivation processes of the gateoxides. On the other hand, the current trends in dielectrics passivation for GaN-based HEMTs to limit thegate leakage and the current collapse are discussed.