X-Ray Investigation of Thick Epitaxial GaAs/InGaAs Layers on Ge Pseudosubstrates

We present an investigation of a series ofsamples with
GaAs/InGaAs layers grown on Ge/Si pseudo-substrates.
The strain in the GaAs and InGaAs layers were calculated
after measuring the lattice constants of the layers using
the x-ray diffraction technique. Both layers were found to
be under low tensile stress restulting from the lattice
mismatch and the difference in thermal expansion
coefficients between the adjacent layers. We explore a
new concept based on cotnterbalancing this thermal
stress.