Low Thermal Budget Fabrication of III-V Quantum Nanostructures on Si Substrates

We show the possibility to integrate high quality III-V quantum nanostructures tunable in
shape and emission energy on Si-Ge Virtual Substrate. Strong photoemission is observed, also at room
temperature, from two different kind of GaAs quantum nanostructures fabricated on Silicon substrate. Due
to the low thermal budget of the procedure used for the fabrication of the active layer, Droplet Epitaxy is to
be considered an excellent candidate for implementation of optoelectronic devices on CMOS circuits.