Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

We present the molecular beam epitaxy fabrication
and optical properties of complex GaAs nanostructures
by droplet epitaxy: concentric triple quantum rings. A
significant difference was found between the volumes of
the original droplets and the final GaAs structures. By
means of atomic force microscopy and photoluminescence
spectroscopy, we found that a thin GaAs quantum well-like
layer is developed all over the substrate during the growth
interruption times, caused by the migration of Ga in a low
As background.