Crystallization mechanism of amorphous silicon carbide

The transition from amorphous to crystalline phase in silicon carbide was
investigated by infrared spectroscopy and transmission electron microscopy
(TEM). Amorphous silicon carbide films on silicon substrate were deposited
by plasma enhanced chemical vapour deposition. Quantitative analysis of the
crystalline fraction has been performed by IR measurements. The
crystallisation kinetic was monitored by following the evolution of the
silicon–carbon bond absorption band in the infrared spectra as a function
of the annealing temperature (800–1000°C) and time. The results indicate
that crystallisation occurs through the nucleation and growth of
crystalline grains and an activation energy of 5.1eV for the process has
been determined.