Electrophoretic deposition of bilayer based on sacrificial titanium dioxide and lead zirconate titanate on bare silicon wafer

Bilayer thick films of sacrificial titanium dioxide and Nb-doped lead zirconate titanate
(PZTN) have been deposited on bare silicon wafers using electrophoretic deposition (EPD)
technique. Deposition of such ceramic particles, dispersed ethanol-based suspensions, on
semiconductor substrate has been made possible after preparation of alloyed junctions Al/Si
characterized by ohmic behaviour. Sintering of green TiO2/PZTN films was performed at 900 oC
for 1 h. The composition of the films, the thickness and relative density of the deposited materials
have been analysed by EDS-SEM analysis. The lead diffusion through the silicon wafer has been
reduced.