Data di Pubblicazione:
2023
Abstract:
In this paper, after a description of the techniques used to realize heterostructures, we present a comparative
analysis of the properties of materials used, in order to identify those that best adapt to the different fields of
application. At last we present, as an example, a simulation study of a TFET (Tunneling Field Effect Transistor)
inverter, whose performances are compared with those of a typical MOS inverter.
analysis of the properties of materials used, in order to identify those that best adapt to the different fields of
application. At last we present, as an example, a simulation study of a TFET (Tunneling Field Effect Transistor)
inverter, whose performances are compared with those of a typical MOS inverter.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Heterostructure; Materials; Technology; TFET; CMOS; Advanced Design System (ADS)
Elenco autori:
Marani, Roberto
Link alla scheda completa:
Pubblicato in: