Data di Pubblicazione:
2014
Abstract:
Novel ballistic electron emission microscopy experiments are reported, aimed to directly visualize and quantify the local inhomogeneities of the effective Schottky barrier height on Au/Nb:SrTiO3 Schottky junctions dominated by interfacial resistance switching effects. The voltage-dependent variation of the local barrier height of the nanometric patches could explain the non-ideal behaviour of the resistance switching effects in transition-metal oxide cells.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
ballistic electron emission microscopy; schottky junction; resistive switching;strontium titanate; oxide electronics; transition metal oxides
Elenco autori:
Gadaleta, Alessandro; Marre', Daniele; Siri, Antonio; Gerbi, Andrea; Buzio, Renato; Bellingeri, Emilio
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