Reaction of the Si/Ta/Ti system: c40tisi2 phase formation and in situ kinetics

The effect of a thin Ta layer at the Si/Ti interface on the intermediate
phase formation has been studied in detail by in situ sheet resistance,
X-ray diffraction and transmission electron microscopy of partially reacted
samples. When a Ta layer is deposited at the Si/Ti interface, a new
intermediate phase has been detected, i.e., the hexagonal TiSi2 C40. This
phase grows on the C40 TaSi2 that is formed at the interface with silicon.
The activation energies of the C40 formation (1.960.3 eV) and the C40-C54
phase transition (3.760.5 eV) have been determined and compared to the
activation energies for the C49 (1.760.1 eV) formation and the C49-C54
(5.160.9 eV) transition. Both the transformation kinetics and the film
morphology are consistent with an increase of the nucleation density with
respect to the C49-C54 transition.