Topographic and structural evolution of etched Si samples

Wet chemical and electrochemical etching of doped Si samples is a promising
technique with a variety of applications ranging from micro-mechanical
manufacturing to pro.les delineation in electronic devices. We have
developed simulation tools specifically designed to support the
optimization phase and the control of these processes. The morphologic
evolution of sub-micrometric portions of the material is simulated at
atomic level by means of a stochastic approach, in which the single atom
detachment probability depends on its coordination status. Etching profile
evolution is simulated using a level-set technique for propagating
interfaces. The nano-structural features (e.g. surface status) of the
etched material are accessible using an atomic level stochastic approach.
The simulation results show a general agreement with the experimental
finding on etched material characterization, capturing also many peculiar
characteristics of the real profiles and nano-structures of the etched
material.