ELECTRONIC STATES ON SI(100)2X1-SB - EXISTENCE OF 2 SEMICONDUCTING PHASES

Two different Sb-induced phases have been found upon annealing on freshly evaporated Si(100)2 x 1 surfaces. The surface electronic structures of the two phases (1 x 1-Sb and 2 x 1-Sb) have been studied with surface differential reflectivity (SDR) and angle-resolved photoelectron spectroscopy (ARUPS). Both techniques show the existence of a gap of approximately 1.6 and 1.4 eV for the two phases, with the empty state located near the Fermi level.