Thermal redistribution of iron implanted in Czochralski silicon

Different doses of iron ions were implanted in Czochralski grown single-crystal silicon samples
and subsequently annealed at 1000°C for 2 h in a dry nitrogen atmosphere. The behavior of the
implanted iron and of oxygen already present in the material was monitored. It was found that
the existence of the remaining structural disorder after the annealing treatment plays a
dominant role in iron and oxygen segregation into the disordered region. This confirms the
theory which predicts that the structural disorder and related strain fields are dominant
mechanisms for gettering of metallic ions.