Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3ÕSi Interfaces for Advanced Gate Stacks

Atomic layer deposition ALD has received increasing attention in relation to the growth of high-permittivity rare-earth
oxides for advanced gate stack applications. Transistor reliability strongly depends on the oxide/semiconductor interface properties.
In this study, we perform transmission electron microscopy measurements in the high-resolution mode coupled with electron
energy loss spectroscopy experiments to probe at the nanometric scale interface layer IL issues for ALD-grown La2O3/Si stacks.
Complementary results from electrical and X-ray diffraction measurements on selected samples are also discussed. We demonstrate
that the La2O3 film reactivity with the Si surface can be controlled up to a certain extent by appropriately choosing the ALD
precursor combination. In particular, we prove that the LaCp3 + O3 scheme is more attractive than the LaCp3 + H2O one for
depositing La2O3 films because it gives rise to a lower IL thickness and interface trap density and to a smaller critical sample
thickness for the stabilization of the high- hexagonal La2O3 phase.