Silicon nanowires grown on Si (100) substrates via thermal reactions with carbon nanoparticles

The effect of thermal processing at 1050 _C of a dispersed film of carbon nanoparticles deposited on a Si substrate with a native SiO2 layer has been studied by scanning electron microscopy and scanning photoelectron spectromicroscopy. It has been found that the thermal processing results in formation of pyramidal-shaped defects of 2–7 micron with strongly reduced SiO2 content with silicon wires of diameter ranging between 30 and 50nm decorating the pyramid walls. The nucleation of the Si nanowires occurs via reduction of the native oxide layer by the nanosized carbon particles, without the need of metal catalysts and at temperatures relatively lower than that used in similar techniques.