Frequency-dependent conductivity in boron- and phosphorus-doped amorphous silicon films

Boron- and phosphorus-doped hydrogenated amorphous sd~con films were obtamed by a reactwe evaporatmn method The
influence of doping on a c conductwlty was mvesUgated m the frequency range from 10 Hz to 100 kHz and m the temperature
range from 150 to 450 K For all the samples high frequency conductwlty follows the A~o' law Experimental data were analysed
with the quantum mechamcal tunnelhng and the correlated barrier hoppmg models, using the pair and the extended pair
approximations