Data di Pubblicazione:
2002
Abstract:
Hydrogenated microcrystalline silicon (mc-Si:H) films have been prepared
by Plasma Enhanced Chemical Vapour Deposition (PECVD) from a mixture of
silane highly diluted in hydrogen.
The effect of the molecule dwell time on the deposition rate and on the
electrical and structural properties has been investigated.
The molecule dwell time appears to control orientation and grain size.
Highly conductive mc-Si:H films with rough surface have been grown with
high deposition rate at higher molecule dwell time in an appropriate
silane concentration. These films show an enhancement of the optical
absorption in the near infrared region suitable for PV applications
by Plasma Enhanced Chemical Vapour Deposition (PECVD) from a mixture of
silane highly diluted in hydrogen.
The effect of the molecule dwell time on the deposition rate and on the
electrical and structural properties has been investigated.
The molecule dwell time appears to control orientation and grain size.
Highly conductive mc-Si:H films with rough surface have been grown with
high deposition rate at higher molecule dwell time in an appropriate
silane concentration. These films show an enhancement of the optical
absorption in the near infrared region suitable for PV applications
Tipologia CRIS:
01.01 Articolo in rivista
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