Improvement of the diffusive component of dark current in SiPM pixels
Contributo in Atti di convegno
Data di Pubblicazione:
2012
Abstract:
The temperature behavior of dark current in SiPM
pixels was studied for two fabrication technologies differing in
the anode contact. The first (old) technology had the contact on
the front while the second (new) has the anode contact on the
back. The layout changes allowed us to obtain a strong
reduction of the dark current diffusive component thus
strongly improving the device performances
pixels was studied for two fabrication technologies differing in
the anode contact. The first (old) technology had the contact on
the front while the second (new) has the anode contact on the
back. The layout changes allowed us to obtain a strong
reduction of the dark current diffusive component thus
strongly improving the device performances
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
Silicon Photomultipliers (SiPM); Dark Counts.
Elenco autori:
Pagano, Roberto; Lombardo, SALVATORE ANTONINO; Libertino, Sebania; Corso, Domenico
Link alla scheda completa:
Titolo del libro:
The Third International Conference on Sensor Device Technologies and Applications, SENSORDEVICES 2012
Pubblicato in: